advanced power p-channel enhancement mode electronics corp. power mosfet capable of 1.8v gate drive bv dss -20v small size & lower profile r ds(on) 26m halogen free & rohs compliant product i d -8a description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 52 /w data and specifications subject to change without notice ap6985gn2-hf rating halogen-free product -8 storage temperature range drain current 3 @ v gs =4.5v drain current 3 @ v gs =4.5v pulsed drain current 1 -55 to 150 total power dissipation 3 -6.4 -30 1 parameter thermal data 201408202 -20 + 8 parameter drain-source voltage gate-source voltage 2.4 -55 to 150 operating junction temperature range ap6985 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. dfn 2x2 d d g d d s dd g s d d ds top view g d s .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v r ds(on) static drain-source on-resistance 2 v gs =-4.5v, i d =-7a - 23 26 m v gs =-2.5v, i d =-4a - 29 35 m v gs =-1.8v, i d =-2a - 34 45 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.3 - -1 v g fs forward transconductance v ds =-5v, i d =-7a - 21 - s i dss drain-source leakage current v ds =-16v, v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 8v, v ds =0v - - + 100 na q g total gate charge i d =-7a - 16 27 nc q gs gate-source charge v ds =-10v - 3 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 6 - nc t d(on) turn-on delay time v ds =-10v - 9 - ns t r rise time i d =-1a - 15 - ns t d(off) turn-off delay time r g =3.3 -60- ns t f fall time v gs =-5v - 32 - ns c iss input capacitance v gs =0v - 1655 2640 pf c oss output capacitance v ds =-10v - 175 - pf c rss reverse transfer capacitance f=1.0mhz - 150 - pf r g gate resistance f=1.0mhz - 10 20 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-2a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-7a, v gs =0 v , - 27 - ns q rr reverse recovery charge di/dt=100a/s - 24 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. ap6985gn2-hf 2 3.surface mounted on 1 in 2 2oz copper pad of fr4 board, t < 10s ; 165 o c/w when mounted on min. copper pad. .
a p6985gn2-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 6 12 18 24 30 0 4 8 12 16 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -4.5v -3.5v -2.5v -1.8v v g = -1.5v 0 6 12 18 24 30 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 150 o c -4.5v -3.5v -2.5v -1.8v v g = -1.5v 20 30 40 50 0.5 1.5 2.5 3.5 4.5 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-2a t a =25 o c 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-7a v g = -4.5 v 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d = -250ua .
ap6985gn2-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. drain current v.s. ambient temperature 4 0 1 2 3 4 5 6 0 4 8 12 16 20 24 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -7a v ds = -10v 0 400 800 1200 1600 2000 1 5 9 13172125 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 165 /w t t 0.02 operation in this area limited by r ds(on) 0 6 12 18 24 30 01234 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -5v 0 2 4 6 8 10 25 50 75 100 125 150 t a , ambient temperature ( o c ) -i d , drain current (a) t j = -40 o c .
ap6985gn2-hf marking information 5 6985 ywws part number : 6985 date code (ywws) y last digit of the year ww week s sequence .
package outline : dfn 2x2-6l millimeters min nom max a 0.70 0.75 0.80 a1 0.00 0.03 0.05 b 0.25 0.30 0.35 c d 1.924 2.00 2.076 d1 0.85 0.95 1.05 d2 0.46 0.56 0.66 e 1.924 2.00 2.076 e1 0.80 0.90 1.00 e2 0.20 0.30 0.40 e l 0.174 0.25 0.326 symbols advanced power electronics corp. 0.203 (ref.) 0.65 (typ) bottom view d d b l a1 c a 1 e e e1 e2 d 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. draw no. m2-n2s6-g-v0 0 c .
dfn 2x2 - 6l advanced power elect ronics corp. draw no. m2 - n2s6 - g - v00 dfn 2 x 2 - 6l footprint 0.65 mm 0.3 mm 0.65 mm 0.85 mm 0.3 mm 0.4mm 0.9 mm 0.25 mm 2.00 mm .
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